DDR5 memory became mainstream just a few months ago, but Samsung is already early in the process of developing next-generation DDR6 memory.
Samsung confirms that early development of DDR6 memory has already begun, uses MSAP technology and aims to deliver speeds of up to 17,000 Mbps
At a seminar in Suwon, South Korea, Samsung’s Vice President for Test and System Package (TSP) revealed that packaging technology must evolve as the performance of memory itself increases to the future. The company has confirmed that it is already in the early stages of development of its next-generation DDR6 memory which will use MSAP technology.
According to Samsung, MSAP is already used by its competitors (SK Hynix and Micron) in DDR5. So what’s up with MSAP? Well, MSAP or Modified Semi-Additive Process allows DRAM manufacturers to create memory modules with finer circuitry. This is achieved by covering circuit patterns in empty spaces that were previously left untouched, allowing for better connections and faster transfer speeds. The next generation of DDR6 memory will not only take advantage of MSAP to improve circuit connection, but will also accommodate the increased number of layers that will be incorporated into DDR6 memory.
The previous tenting method covered only the areas of the circular copper plate where the circuit patterns will be formed while the other areas were etched.
But in MSAP, areas other than circuitry are coated and gaps plated, allowing for thinner circuitry. As the capacity and data-processing speed of memory chips increase, packages must be designed to accommodate this, the vice president said. As the number of layers increases and processes become more sophisticated, the memory package market is also expected to grow exponentially, Ko said.
In terms of fan-out, another packaging technology where I/O terminals are placed outside the chip to allow the chips to become smaller while maintaining the bullet layout, Samsung was applying both out-wafer fan level packages (FO-WLP) and off-panel fan level packages (FO-PLP).
via THE ELEC, Korea Electronics Industry Media
Samsung expects its DDR6 design to be finalized by 2024, but commercial use is not expected after 2025. In terms of specifications, DDR6 memory will be up to twice as fast as existing DDR5 memory. , with transfer speeds of up to 12,800 Mbps (JEDEC ) and overclocked speeds exceeding the 17,000 Mbps range. Currently, Samsung’s fastest DDR5 DIMM has a transfer speed of up to 7,200 Mbps, representing a 1.7x improvement at JEDEC and 2.36x with overclocked speeds for next-gen memory chips .
That said, memory manufacturers have already highlighted speeds of up to DDR5-12600 in the near future, so DDR5 definitely has the potential for mainstream platforms. Expect faster, more optimized DDR5 memory modules later this year with the launch of AMD’s Zen 4 and Intel’s Raptor Lake CPU platforms.
News Source: SAMMOBILE